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IGBT MODULE CIRCUIT Single 600A 600V OUTLINE DRAWING PHMB600A6 Dimension(mm) MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 650g Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR M3 PHMB600A6 600 +/ - 20 600 1200 2080 -40 to +150 -40 to +125 2500 3 1.4 10 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals M8 Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=600A,VGE=15V VCE=5V,IC=600mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.5 ohm RG= 1.0 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 60,000 0.25 0.45 0.2 0.6 Max. 6.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 600 1200 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=600A,VGE=0V IF=600A,VGE=-10V,di/dt=600A/s Min. - Max. 2.4 0.25 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.06 0.14 PHMB600A6 Fig.1- Output Characteristics (Typical) 1200 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25 16 TC=25 IC=160A 1200A VGE=20V 12V 1000 Collector to Emitter Voltage V CE (V) 15V 10V 14 600A 12 10 8 6 4 2 0 Collector Current I C (A) 800 600 9V 400 200 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 IC=160A 1200A Collector to Emitter Voltage V CE (V) 600A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=0.5 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=300V 150 6 200V 100 4 100V 50 0 0 300 600 900 1200 1500 1800 2100 2400 2 0 2700 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 500000 200000 100000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Cies Coes Cres VGE=0V f=1MHZ TC=25 VCC=300V RG=1.0 VGE=15V TC=25 Capacitance C (pF) 50000 20000 10000 5000 2000 1000 500 200 Switching Time t (s) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 toff ton tr tf 0.2 0.5 1 2 5 10 20 50 100 200 0 0 100 200 300 400 500 600 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PHMB600A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 1200 (Typical) TC=25 1000 2 VCC=300V IC=600A VG=15V TC=25 TC=125 Switching Time t (s) Forward Current I F (A) 1 800 toff 0.5 ton tr 600 0.2 400 tf 0.1 200 0.05 0.5 1 2 5 10 20 50 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 1000 500 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=600A TC=25 trr RG=1.0 VGE=15V TC125 200 Collector Current I C (A) 1000 2000 3000 4000 200 100 50 20 10 5 2 1 0.5 0.2 100 50 IRrM 20 10 5 0 0.1 0 200 400 600 800 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 5x10 -1 (/W) 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 2x10 1x10 -4 -4 FRD IGBT Transient Thermal Impedance Rth (J-C) TC=25 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 10 -5 Time t (s) |
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