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 IGBT MODULE
CIRCUIT
Single 600A 600V
OUTLINE DRAWING
PHMB600A6
Dimension(mm) MAXMUM RATINGS (Tc=25C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Approximate Weight : 650g
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR M3
PHMB600A6
600 +/ - 20 600 1200 2080 -40 to +150 -40 to +125 2500 3 1.4 10
Unit
V V A W C C V N*m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
M8 Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Test Condition
VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=600A,VGE=15V VCE=5V,IC=600mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 0.5 ohm RG= 1.0 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
2.1 60,000 0.25 0.45 0.2 0.6
Max.
6.0 1.0 2.6 8.0 0.45 0.85 0.35 0.8
Unit mA A V V pF s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 600 1200
Unit A Typ.
1.9 0.15
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=600A,VGE=0V IF=600A,VGE=-10V,di/dt=600A/s
Min.
-
Max.
2.4 0.25
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.06 0.14
PHMB600A6
Fig.1- Output Characteristics (Typical)
1200
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25
16
TC=25 IC=160A 1200A
VGE=20V
12V
1000
Collector to Emitter Voltage V CE (V)
15V 10V
14
600A
12 10 8 6 4 2 0
Collector Current I C (A)
800
600
9V
400
200
8V 7V
0
0
2
4
6
8
10
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350 300 250 200 16
TC=125 IC=160A 1200A
Collector to Emitter Voltage V CE (V)
600A
12 10 8 6 4 2 0
Collector to Emitter Voltage V CE (V)
14
RL=0.5 TC=25
14
Gate to Emitter Voltage VGE (V)
12 10 8
VCE=300V
150 6
200V
100 4
100V
50 0 0 300 600 900 1200 1500 1800 2100 2400 2 0 2700
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
500000 200000 100000
Fig.6- Collector Current vs. Switching Time (Typical)
1 0.9 0.8
Cies Coes Cres
VGE=0V f=1MHZ TC=25
VCC=300V RG=1.0 VGE=15V TC=25
Capacitance C (pF)
50000 20000 10000 5000 2000 1000 500 200
Switching Time t (s)
0.7 0.6 0.5 0.4 0.3 0.2 0.1
toff
ton
tr tf
0.2
0.5
1
2
5
10
20
50
100
200
0
0
100
200
300
400
500
600
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
PHMB600A6
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
1200
(Typical)
TC=25
1000
2
VCC=300V IC=600A VG=15V TC=25
TC=125
Switching Time t (s)
Forward Current I F (A)
1
800
toff
0.5
ton tr
600
0.2
400
tf
0.1
200
0.05
0.5
1
2
5
10
20
50
0
0
1
2
3
4
Series Gate Impedance RG ()
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
Fig.10- Reverse Bias Safe Operating Area (Typical)
5000 2000 1000 500
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF=600A TC=25 trr
RG=1.0 VGE=15V TC125
200
Collector Current I C (A)
1000 2000 3000 4000
200 100 50 20 10 5 2 1 0.5 0.2
100
50
IRrM
20
10
5
0
0.1
0
200
400
600
800
-di/dt (A/s)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
5x10 -1
(/W)
2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 2x10 1x10
-4 -4
FRD IGBT
Transient Thermal Impedance Rth
(J-C)
TC=25 1 Shot Pulse
10 -4 10 -3 10 -2 10 -1 1 10 1
10 -5
Time t (s)


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